MMBT5500

Symbol Micros: TMMBT5550
Contractor Symbol:
Case : SOT23-3
Trans GP BJT NPN 140V 0.6A 300mW 3-Pin SOT-23 MMBT5550LT1G MMBT5550LT3G
Parameters
Power dissipation: 300mW
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 250
Case: SOT23-3
Max. collector current: 600mA
Max collector-emmiter voltage: 140V
Operating temperature (range): -55°C ~ 150°C
Manufacturer:: ON-Semiconductor Manufacturer part number: MMBT5550LT1G RoHS Case style: SOT23-3 t/r Datasheet
In stock:
2500 pcs.
Quantity of pcs. 10+ 50+ 200+ 1000+ 3000+
Net price (EUR) 0,1141 0,0450 0,0263 0,0192 0,0176
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Packaging:
3000
Manufacturer:: ON-Semiconductor Manufacturer part number: MMBT5550LT3G Case style: SOT23-3  
External warehouse:
60000 pcs.
Quantity of pcs. 10000+ (Please wait for the order confirmation)
Net price (EUR) 0,0184
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Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: MMBT5550LT1G Case style: SOT23-3  
External warehouse:
387000 pcs.
Quantity of pcs. 30000+ (Please wait for the order confirmation)
Net price (EUR) 0,0176
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: MMBT5550LT1G Case style: SOT23-3  
External warehouse:
15000 pcs.
Quantity of pcs. 12000+ (Please wait for the order confirmation)
Net price (EUR) 0,0176
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 300mW
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 250
Case: SOT23-3
Max. collector current: 600mA
Max collector-emmiter voltage: 140V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN