MMBT5500

Symbol Micros: TMMBT5550

137641

TMMBT5550

Contractor Symbol:

Case : SOT23-3

Datasheet

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Trans GP BJT NPN 140V 0.6A 300mW 3-Pin SOT-23 MMBT5550LT1G MMBT5550LT3G

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23-3
Current gain factor:	250
Max. collector current:	600mA
Max collector-emmiter voltage:	140V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: MMBT5550LT1G RoHS Case style: SOT23-3 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,1047	0,0413	0,0240	0,0176	0,0161

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23-3
Current gain factor:	250
Max. collector current:	600mA
Max collector-emmiter voltage:	140V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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