MMBT5551

Symbol Micros: TMMBT5551

53296

TMMBT5551

Contractor Symbol:

Case : SOT23

Datasheet

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Tranzystor NPN; 250; 350mW; 160V; 600mA; 100MHz; -55°C ~ 150°C; Odpowiednik: MMBT5551-TP; MMBT5551LT1; MMBT5551-YAN; MMBT5551-DIO;

Parameters

Power dissipation:	350mW
Case:	SOT23
Current gain factor:	250
Cutoff frequency:	100MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C

All parameters

         

 

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• Parameters

Power dissipation:	350mW
Case:	SOT23
Current gain factor:	250
Cutoff frequency:	100MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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