MMBT5551

Symbol Micros: TMMBT5551 MDD

527524

TMMBT5551 MDD

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; Bipolar; 300; 160V; 6V; 300MHz 600mA; 300mW; -55°C~150°C; Substitute: MMBT5551-LGE; MMBT5551-TP; MMBT5551LT1; MMBT5551-YAN; TCMBT5551; CMBT5551;

Parameters

Power dissipation:	300mW
Manufacturer:	MDD
Current gain factor:	300
Case:	SOT23
Cutoff frequency:	300MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	160V

All parameters

Manufacturer:: MDD(Microdiode Electronics) Manufacturer part number: MMBT5551 RoHS Case style: SOT23t/r Datasheet

In stock:

15000 pcs.

Quantity of pcs.	20+	100+	500+	3000+	15000+
Net price (EUR)	0,0432	0,0162	0,0087	0,0065	0,0060

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	300mW
Manufacturer:	MDD
Current gain factor:	300
Case:	SOT23
Cutoff frequency:	300MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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