MMBT5551

Symbol Micros: TMMBT5551 MDD

527524

TMMBT5551 MDD

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; Bipolar; 300; 160V; 6V; 300MHz 600mA; 300mW; -55°C~150°C; Substitute: MMBT5551-E; MMBT5551-LGE; MMBT5551-TP; MMBT5551LT1; MMBT5551-YAN; TCMBT5551; CMBT5551;

Parameters

Power dissipation:	300mW
Manufacturer:	MDD
Current gain factor:	300
Case:	SOT23
Cutoff frequency:	300MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	160V

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Estimated date:
2026-04-16

Quantity of pcs.: 9000

• Parameters

Power dissipation:	300mW
Manufacturer:	MDD
Current gain factor:	300
Case:	SOT23
Cutoff frequency:	300MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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