MMBT5551M3T5G

Symbol Micros: TMMBT5551m3
Contractor Symbol:
Case : SOT723
Trans GP BJT NPN 160V 0.06A 640mW 3-Pin SOT-723
Parameters
Power dissipation: 640mW
Current gain factor: 250
Manufacturer: ON SEMICONDUCTOR
Case: SOT723
Max. collector current: 60mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -55°C ~ 150°C
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551M3T5G RoHS Case style: SOT723 Datasheet
In stock:
90 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2501 0,1253 0,0746 0,0618 0,0556
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Packaging:
100
Power dissipation: 640mW
Current gain factor: 250
Manufacturer: ON SEMICONDUCTOR
Case: SOT723
Max. collector current: 60mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN