MMBT8050D(1.5A)

Symbol Micros: TMMBT8050D-1.5 PJ

403534

TMMBT8050D-1.5 PJ

Contractor Symbol:

Case : SOT23

Datasheet

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25V 350mW 160@100mA,1V 1.5A NPN SOT-23 Bipolar Transistors - BJT ROHS

Parameters

Power dissipation:	350mW
Manufacturer:	PJSEMI
Current gain factor:	400
Case:	SOT23
Cutoff frequency:	120MHz
Max. collector current:	1,5A
Max collector-emmiter voltage:	25V

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Estimated date:
2025-11-28

Quantity of pcs.: 3000

• Parameters

Power dissipation:	350mW
Manufacturer:	PJSEMI
Current gain factor:	400
Case:	SOT23
Cutoff frequency:	120MHz
Max. collector current:	1,5A
Max collector-emmiter voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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