MMBTA06LT1G

Symbol Micros: TMMBTA06lt1

36314

TMMBTA06lt1

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; 100; 300mW; 80V; 500mA; 100MHz; -55°C ~ 150°C; Replacement: MMBTA06LT1G; MMBTA06-DIO; MMBTA06 DIOTEC; MMBTA06-7-F Diodes; MMBTA06LT3G;

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	100
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	80V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTA06LT1G RoHS Case style: SOT23t/r Datasheet

In stock:

4826 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1233	0,0565	0,0308	0,0230	0,0205

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	100
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	80V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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