MMDT5551-7-F

Symbol Micros: TMMDT5551-7-F Diodes
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Case : SOT363
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Transistor Dual NPN; Bipolar; 160V; 6V; 250; 300MHz; 200mA; 200mW; -55°C~150°C;
Parameters
Power dissipation: 200mW
Case: SOT363
Manufacturer: DIODES
Current gain factor: 250
Cutoff frequency: 300MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 160V
         
 
Item available on request
Power dissipation: 200mW
Case: SOT363
Manufacturer: DIODES
Current gain factor: 250
Cutoff frequency: 300MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -55°C ~ 150°C
Transistor type: 2xNPN

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