MMUN2232LT1G

Symbol Micros: TMMUN2232

124632

TMMUN2232

Contractor Symbol:

Case : SOT23

Datasheet

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Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23

Parameters

Power dissipation:	400mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	30
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMUN2232LT1G RoHS Case style: SOT23t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	10+	40+	100+	500+	2500+
Net price (EUR)	0,0997	0,0440	0,0288	0,0184	0,0153

Add to comparison tool Add inquiry (RFQ)

Packaging:
100 Quantity (multiple: 10)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: MMUN2232LT1G Case style: SOT23  

External warehouse:

2577000 pcs.

Quantity of pcs.	12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0153

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: MMUN2232LT1G Case style: SOT23  

External warehouse:

978000 pcs.

Quantity of pcs.	39000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0153

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: MMUN2232LT1G Case style: SOT23  

External warehouse:

1143000 pcs.

Quantity of pcs.	15000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0153

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	400mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	30
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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