MS3N100HGD0

Symbol Micros: TMS3N100HGD0
Contractor Symbol:
Case : TO252
MOSFET 3A,1000V,TO-252
Parameters
Open channel resistance: 5,8Ohm
Max. drain current: 3A
Max. power loss: 50W
Case: TO252
Manufacturer: Maspower
Max. drain-source voltage: 1000V
Transistor type: N-MOSFET
         
 
Item available on request
         
 
Item in delivery
Estimated date:
2025-07-11
Quantity of pcs.: 500
Open channel resistance: 5,8Ohm
Max. drain current: 3A
Max. power loss: 50W
Case: TO252
Manufacturer: Maspower
Max. drain-source voltage: 1000V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD