MS3N100HGD0

Symbol Micros: TMS3N100HGD0

528751

TMS3N100HGD0

Contractor Symbol:

Case : TO252

Datasheet

Technical drawing Add to favourites

MOSFET 3A,1000V,TO-252

Parameters

Open channel resistance:	5,8Ohm
Max. drain current:	3A
Max. power loss:	50W
Case:	TO252
Manufacturer:	Maspower
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: MASPOWER Manufacturer part number: MS3N100HGD0 RoHS Case style: TO252t/r  

In stock:

500 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,4807	0,2889	0,2214	0,1994	0,1925

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5,8Ohm
Max. drain current:	3A
Max. power loss:	50W
Case:	TO252
Manufacturer:	Maspower
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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