MS3N100HGD0
Symbol Micros:
TMS3N100HGD0
Case : TO252
MOSFET 3A,1000V,TO-252
Parameters
Open channel resistance: | 5,8Ohm |
Max. drain current: | 3A |
Max. power loss: | 50W |
Case: | TO252 |
Manufacturer: | Maspower |
Max. drain-source voltage: | 1000V |
Transistor type: | N-MOSFET |
Item in delivery
Estimated date:
2025-07-11
Quantity of pcs.: 500
Open channel resistance: | 5,8Ohm |
Max. drain current: | 3A |
Max. power loss: | 50W |
Case: | TO252 |
Manufacturer: | Maspower |
Max. drain-source voltage: | 1000V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 30V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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