MS3N100HGD0
Symbol Micros:
TMS3N100HGD0
Case : TO252
MOSFET 3A,1000V,TO-252
Parameters
| Open channel resistance: | 5,8Ohm |
| Max. drain current: | 3A |
| Max. power loss: | 50W |
| Case: | TO252 |
| Manufacturer: | Maspower |
| Max. drain-source voltage: | 1000V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 5,8Ohm |
| Max. drain current: | 3A |
| Max. power loss: | 50W |
| Case: | TO252 |
| Manufacturer: | Maspower |
| Max. drain-source voltage: | 1000V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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