MSG40T65HHC0

Symbol Micros: TMSG40T65HHC0

528767

TMSG40T65HHC0

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 20V; 80A; 120A; 375W; 4V~6V; 219nC; -55°C~175°C;

Parameters

Gate charge:	219nC
Max. dissipated power:	375W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	Maspower

All parameters

Manufacturer:: MASPOWER Manufacturer part number: MSG40T65HHC0 RoHS Case style: TO247 Datasheet

In stock:

90 pcs.

Quantity of pcs.	1+	5+	30+	90+	270+
Net price (EUR)	1,5597	1,1542	0,9837	0,9399	0,9169

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Packaging:
30/90 Quantity (multiple: 1)

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• Parameters

Gate charge:	219nC
Max. dissipated power:	375W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	Maspower
Operating temperature (range):	-55°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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