MSG50T120FQW

Symbol Micros: TMSG50T120FQW

528771

TMSG50T120FQW

Contractor Symbol:

Case : TO264

Datasheet

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Transistor IGBT ; 1200V; 20V; 100A; 200A; 535W; 4,5V~6,5V; 198nC; -55°C~175°C;

Parameters

Gate charge:	311nC
Max. dissipated power:	535W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO264
Manufacturer:	Maspower

All parameters

Manufacturer:: MASPOWER Manufacturer part number: MSG50T120FQW RoHS Case style: TO264 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	25+	50+	200+
Net price (EUR)	3,4172	2,9387	2,7310	2,6843	2,6283

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Packaging:
25/50 Quantity (multiple: 1)

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• Parameters

Gate charge:	311nC
Max. dissipated power:	535W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO264
Manufacturer:	Maspower
Operating temperature (range):	-55°C ~ 175°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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