MUN5111DW1T1G ONSemiconductor

Symbol Micros: TMUN5111dw

114895

TMUN5111dw

Contractor Symbol:

Case : SOT363

Datasheet

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2PNP 50V 100mA 250mW

Parameters

Power dissipation:	385mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	60
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C

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• Parameters

Power dissipation:	385mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	60
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xPNP

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