MUN5212DW1T1G ONSemiconductor

Symbol Micros: TMUN5212dw

114886

TMUN5212dw

Contractor Symbol:

Case : SOT363

Datasheet

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2NPN 50V 100mA 250mW

Parameters

Power dissipation:	385mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	100
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: MUN5212DW1T1G RoHS Case style: SOT363 t/r Datasheet

In stock:

6000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1157	0,0531	0,0289	0,0216	0,0193

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Packaging:
3000/6000 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: MUN5212DW1T1G Case style: SOT363  

External warehouse:

21000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,0273

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	385mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	100
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xNPN

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