MUN5212DW1T1G ONSemiconductor
Symbol Micros:
TMUN5212dw
Case : SOT363
2NPN 50V 100mA 250mW
Parameters
| Power dissipation: | 385mW |
| Manufacturer: | ON SEMICONDUCTOR |
| Current gain factor: | 100 |
| Case: | SOT363 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -55°C ~ 150°C |
Manufacturer:: ON-Semicoductor
Manufacturer part number: MUN5212DW1T1G RoHS
Case style: SOT363 t/r
Datasheet
In stock:
6000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1194 | 0,0548 | 0,0298 | 0,0223 | 0,0199 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: MUN5212DW1T1G
Case style: SOT363
External warehouse:
15000 pcs.
| Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0248 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: MUN5212DW1T1G
Case style: SOT363
External warehouse:
735000 pcs.
| Quantity of pcs. | 21000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0199 |
| Power dissipation: | 385mW |
| Manufacturer: | ON SEMICONDUCTOR |
| Current gain factor: | 100 |
| Case: | SOT363 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | 2xNPN |
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