NDS0610

Micros part number: TNDS0610
Package: SOT23
P-MOSFET 120mA 60V 360mW
Parameters
Open channel resistance: 20Ohm
Max. drain current: 120mA
Max. power loss: 360mW
Housing: SOT23
Max. drain-source voltage: 60V
Producer: ON SEMICONDUCTOR
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: NDS0610 RoHS Package: SOT23t/r  
In stock:
48 pcs.
Quantity 5+ 20+ 100+ 400+ 1922+
Net price (PLN) 0,6600 0,3120 0,1750 0,1350 0,1200
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Standard packaging:
1922
Manufacturer:: ON-Semicoductor Manufacturer part number: NDS0610 RoHS Package: SOT23t/r  
In stock:
4125 pcs.
Quantity 5+ 20+ 100+ 500+ 3000+
Net price (PLN) 0,6600 0,3140 0,1760 0,1340 0,1200
Add to comparison tool
Standard packaging:
3000
Open channel resistance: 20Ohm
Max. drain current: 120mA
Max. power loss: 360mW
Housing: SOT23
Max. drain-source voltage: 60V
Producer: ON SEMICONDUCTOR
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Montage: SMD