NDS0610

Symbol Micros: TNDS0610

43088

TNDS0610

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-MOSFET; 60V; 20V; 20Ohm; 120mA; 360mW; -55°C~150°C; Substitute: NDS0610-G;

Parameters

Open channel resistance:	20Ohm
Max. drain current:	120mA
Max. power loss:	360mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NDS0610 RoHS Case style: SOT23t/r Datasheet

In stock:

3059 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2211	0,1121	0,0679	0,0538	0,0491

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: NDS0610 Case style: SOT23  

External warehouse:

700 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,0577

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Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	20Ohm
Max. drain current:	120mA
Max. power loss:	360mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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