NDS0610

Symbol Micros: TNDS0610
Contractor Symbol:
Case : SOT23
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Transistor P-MOSFET; 60V; 20V; 20Ohm; 120mA; 360mW; -55°C~150°C; Substitute: NDS0610-G;
Parameters
Open channel resistance: 20Ohm
Max. drain current: 120mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: NDS0610 RoHS Case style: SOT23t/r Datasheet
In stock:
12 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2189 0,1109 0,0672 0,0533 0,0486
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Packaging:
1922
Manufacturer:: ON-Semicoductor Manufacturer part number: NDS0610 RoHS Case style: SOT23t/r Datasheet
In stock:
3405 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2189 0,1109 0,0672 0,0533 0,0486
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Packaging:
3000
Open channel resistance: 20Ohm
Max. drain current: 120mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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