NDS331N HXY MOSFET

Symbol Micros: TNDS331n HXY
Contractor Symbol:
Case : SOT23
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Transistor N-Channel MOSFET; 20V; 12V; 72mOhm; 2,3A; 900mW; -55°C ~ 150°C; Equivalent: NDS331N Onsemi;
Parameters
Open channel resistance: 72mOhm
Max. drain current: 2,3A
Max. power loss: 900mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: NDS331N RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1339 0,0613 0,0334 0,0249 0,0223
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Packaging:
3000
Open channel resistance: 72mOhm
Max. drain current: 2,3A
Max. power loss: 900mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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