NDS355AN smd

Symbol Micros: TNDS355an

39401

TNDS355an

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.7A 30V 0.5W 0.085Ω

Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NDS355AN RoHS Case style: SOT23t/r  

In stock:

1864 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7068	0,4468	0,3522	0,3215	0,3073

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: NDS355AN Case style: SOT23  

External warehouse:

28500 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,3073

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Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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