NDS356AP

Symbol Micros: TNDS356ap

43089

TNDS356ap

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 30V; 4,5V; 200mOhm; 1,1A; 500mW; -55°C~150°C;

Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,1A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Max. drain-gate voltage:	4,5V

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• Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,1A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Max. drain-gate voltage:	4,5V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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