NDT3055L smd

Symbol Micros: TNDT3055l

10504

TNDT3055l

Contractor Symbol:

Case : SOT223

Datasheet

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N-MOSFET 4A 60V 0.1Ω

Parameters

Open channel resistance:	180mOhm
Max. drain current:	4A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NDT3055L RoHS Case style: SOT223t/r  

In stock:

166 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6678	0,4220	0,3339	0,3038	0,2899

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	180mOhm
Max. drain current:	4A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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