NDT451AN

Symbol Micros: TNDT451an

43094

TNDT451an

Contractor Symbol:

Case : SOT223

Datasheet

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Transistor N-Channel MOSFET; 30V; 10V; 35mOhm; 7,2A; 3W; -65°C~150°C;

Parameters

Open channel resistance:	35mOhm
Max. drain current:	7,2A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ONSEMI
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NDT451AN Case style: SOT223  

External warehouse:

4000 pcs.

Quantity of pcs.	4000+ (Please wait for the order confirmation)
Net price (EUR)	0,4310

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Packaging:
4000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	35mOhm
Max. drain current:	7,2A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ONSEMI
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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