NDT451AN

Symbol Micros: TNDT451an

43094

TNDT451an

Contractor Symbol:

Case : SOT223

Datasheet

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Transistor N-Channel MOSFET; 30V; 10V; 35mOhm; 7,2A; 3W; -65°C~150°C;

Parameters

Open channel resistance:	35mOhm
Max. drain current:	7,2A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ONSEMI
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	35mOhm
Max. drain current:	7,2A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ONSEMI
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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