NDT452AP

Symbol Micros: TNDT452ap

43095

TNDT452ap

Contractor Symbol:

Case : SOT223

Datasheet

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Transistor P-Channel MOSFET; 30V; 20V; 65mOhm; 5A; 3W; -65°C~150°C;

Parameters

Open channel resistance:	65mOhm
Max. drain current:	5A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ONSEMI
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	65mOhm
Max. drain current:	5A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ONSEMI
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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