NDT456P SOT223

Symbol Micros: TNDT456p

87386

TNDT456p

Contractor Symbol:

Case : SOT223

Datasheet

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P-MOSFET 30V 7.5A 1.1W

Parameters

Open channel resistance:	54mOhm
Max. drain current:	7,5A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	54mOhm
Max. drain current:	7,5A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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