NDT456P SOT223

Symbol Micros: TNDT456p

87386

TNDT456p

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 7.5A 1.1W

Parameters

Open channel resistance:	54mOhm
Max. drain current:	7,5A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: NDT456P Case style: SOT223  

External warehouse:

4000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5097

Add to comparison tool Add inquiry (RFQ)

Packaging:
4000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: NDT456P Case style: SOT223  

External warehouse:

4000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4296

Add to comparison tool Add inquiry (RFQ)

Packaging:
4000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	54mOhm
Max. drain current:	7,5A
Max. power loss:	3W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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