NSS30101LT1G

Symbol Micros: TNSS30101LT1G

369877

TNSS30101LT1G

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

Transistor NPN; Bipolar; 30V; 5V; 900; 100MHz; 1A; 310mW; -55°C~150°C;

Parameters

Power dissipation:	310mW
Cutoff frequency:	100MHz
Current gain factor:	900
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Max. collector current:	1A
Max collector-emmiter voltage:	30V

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Power dissipation:	310mW
Cutoff frequency:	100MHz
Current gain factor:	900
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Max. collector current:	1A
Max collector-emmiter voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.