NSS30101LT1G

Symbol Micros: TNSS30101LT1G

369877

TNSS30101LT1G

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; Bipolar; 30V; 5V; 900; 100MHz; 1A; 310mW; -55°C~150°C;

Parameters

Power dissipation:	310mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	900
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	1A
Max collector-emmiter voltage:	30V

All parameters

         

 

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• Parameters

Power dissipation:	310mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	900
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	1A
Max collector-emmiter voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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