NST65010MW6T1G

Symbol Micros: TNST65010mw6

297851

TNST65010mw6

Contractor Symbol:

Case : SOT363

Datasheet

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Transistor PNP; 475; 380mW, 65V; 100mA; 100MHz, -55°C ~ 150°C;

Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V

All parameters

         

 

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• Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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