NST65010MW6T1G

Symbol Micros: TNST65010mw6

297851

TNST65010mw6

Contractor Symbol:

Case : SOT363

Datasheet

Technical drawing Add to favourites

Transistor PNP; 475; 380mW, 65V; 100mA; 100MHz, -55°C ~ 150°C;

Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NST65010MW6T1G RoHS Case style: SOT363 t/r Datasheet

In stock:

0 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2191	0,1211	0,0805	0,0673	0,0626

Add inquiry (RFQ)

Packaging:
3000/12000 Quantity (multiple: 1)

- +

• Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.