NSV1C300ET4G

Symbol Micros: TNSV1C300et4g

91498

TNSV1C300et4g

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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PNP 3A 100V 33W 100MHz 120 < beta < 360

Parameters

Power dissipation:	2,1W
Cutoff frequency:	100MHz
Current gain factor:	360
Manufacturer:	ON SEMICONDUCTOR
Case:	TO252 (DPACK)
Max. collector current:	3A
Max collector-emmiter voltage:	100V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: NSV1C300ET4G RoHS Case style: TO252t/r (DPACK) Datasheet

In stock:

25 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5646	0,3411	0,2635	0,2376	0,2258

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: NSV1C300ET4G Case style: TO252 (DPACK)  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2720

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	2,1W
Cutoff frequency:	100MHz
Current gain factor:	360
Manufacturer:	ON SEMICONDUCTOR
Case:	TO252 (DPACK)
Max. collector current:	3A
Max collector-emmiter voltage:	100V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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