NSV1C300ET4G

Symbol Micros: TNSV1C300et4g

91498

TNSV1C300et4g

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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PNP 3A 100V 33W 100MHz 120 < beta < 360

Parameters

Power dissipation:	2,1W
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	360
Case:	TO252 (DPACK)
Cutoff frequency:	100MHz
Max. collector current:	3A
Max collector-emmiter voltage:	100V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NSV1C300ET4G RoHS Case style: TO252t/r (DPACK) Datasheet

In stock:

25 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5625	0,3398	0,2625	0,2367	0,2250

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Power dissipation:	2,1W
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	360
Case:	TO252 (DPACK)
Cutoff frequency:	100MHz
Max. collector current:	3A
Max collector-emmiter voltage:	100V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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