NTD20P06L smd

Symbol Micros: TNTD20p06l001

16914

TNTD20p06l001

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Case : TO252 (DPAK)

Datasheet

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P-MOSFET 15.5A 60V 65W 0.13Ω NTD20P06LT4G

Parameters

Open channel resistance:	150mOhm
Max. power loss:	65W
Max. drain current:	15,5A
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	150mOhm
Max. power loss:	65W
Max. drain current:	15,5A
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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