NTD25P03LG

Symbol Micros: TNTD25P03LG VBS

366341

TNTD25P03LG VBS

Contractor Symbol:

Case : TO252

Datasheet

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Transistor P-Channel MOSFET; 30V; 20V; 46mOhm; 38A; 2,5W; -55°C ~ 150°C; NTD25P03LG-VB;

Parameters

Open channel resistance:	46mOhm
Max. drain current:	38A
Max. power loss:	2,5W
Case:	TO252
Manufacturer:	VBsemi
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: VBsemi Manufacturer part number: NTD25P03LG-VB RoHS Case style: TO252t/r Datasheet

In stock:

500 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,4784	0,2889	0,2203	0,1981	0,1914

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	46mOhm
Max. drain current:	38A
Max. power loss:	2,5W
Case:	TO252
Manufacturer:	VBsemi
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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