NTD2955-1G

Symbol Micros: TNTD2955-1g
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Case : TO251 (IPACK)
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P-MOSFET 12A 60V 55W NTD2955T4G, NTD2955G
Parameters
Open channel resistance: 180mOhm
Max. drain current: 12A
Max. power loss: 55W
Case: TO251 (IPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: NTD2955-1G RoHS Case style: TO251 (IPACK) Datasheet
In stock:
168 pcs.
Quantity of pcs. 2+ 10+ 75+ 150+ 750+
Net price (EUR) 0,8152 0,5142 0,3914 0,3752 0,3544
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Packaging:
75/150
Open channel resistance: 180mOhm
Max. drain current: 12A
Max. power loss: 55W
Case: TO251 (IPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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