NTD5867NLT4G

Symbol Micros: TNTD5867nl c

497795

TNTD5867nl c

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

TO-252 MOSFETs ROHS Podobny do: CJ CJU20N06AYFW; YFW50N06AD; TECH PUBLIC NTD5867NLT4G; ONSEMI NTD5867NLT4G; VBSEMI NTD5867NLT4G-VB; HXY MOSFET NTD5867NLT4G-HXY; UMW NTD5867NLT4G(UMW);

Parameters

Open channel resistance:	14mOhm
Max. drain current:	50A
Max. power loss:	45W
Case:	TO252
Manufacturer:	YFW
Max. drain-source voltage:	60V
Max. drain-gate voltage:	2V

All parameters

Manufacturer:: YFW Manufacturer part number: YFW50N06AD RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

740 pcs.

Quantity of pcs.	3+	20+	100+	500+	2500+
Net price (EUR)	0,3072	0,1645	0,1281	0,1158	0,1118

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Packaging:
2500 Quantity (multiple: 1)

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Item in delivery

Estimated date:
2026-12-31

Quantity of pcs.: 200

• Parameters

Open channel resistance:	14mOhm
Max. drain current:	50A
Max. power loss:	45W
Case:	TO252
Manufacturer:	YFW
Max. drain-source voltage:	60V
Max. drain-gate voltage:	2V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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