NTE4151PT1G 

Symbol Micros: TNTE4151p
Contractor Symbol:
Case : SC89-3
Transistor P-Channel MOSFET; 20V; 6V; 360mOhm; 760mA; 313mW; -55°C~150°C;
Parameters
Open channel resistance: 360mOhm
Max. drain current: 760mA
Max. power loss: 760mW
Case: SC89-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Max. drain-gate voltage: 4,5V
Manufacturer:: ON-Semicoductor Manufacturer part number: NTE4151PT1G Case style: SC89-3  
External warehouse:
123000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0172
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 360mOhm
Max. drain current: 760mA
Max. power loss: 760mW
Case: SC89-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Max. drain-gate voltage: 4,5V
Transistor type: P-MOSFET
Max. gate-source Voltage: 6V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD