NTE4151PT1G 

Symbol Micros: TNTE4151p

132711

TNTE4151p

Contractor Symbol:

Case : SC89-3

Datasheet

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Transistor P-Channel MOSFET; 20V; 6V; 360mOhm; 760mA; 313mW; -55°C~150°C;

Parameters

Open channel resistance:	360mOhm
Max. drain current:	760mA
Max. power loss:	760mW
Case:	SC89-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V

All parameters

         

 

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• Parameters

Open channel resistance:	360mOhm
Max. drain current:	760mA
Max. power loss:	760mW
Case:	SC89-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	6V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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