NTE4153NT1G 

Symbol Micros: TNTE4153n
Contractor Symbol:
Case : SC89-3
Transistor N-Channel MOSFET; 20V; 6V; 230mOhm; 915mA; 300mW; -55°C~150°C;
Parameters
Open channel resistance: 230mOhm
Max. drain current: 915mA
Max. power loss: 300mW
Case: SC89-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Max. drain-gate voltage: 4,5V
Manufacturer:: ON-Semicoductor Manufacturer part number: NTE4153NT1G Case style: SC89-3  
External warehouse:
12000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0263
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: NTE4153NT1G Case style: SC89-3  
External warehouse:
189000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0251
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 230mOhm
Max. drain current: 915mA
Max. power loss: 300mW
Case: SC89-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Max. drain-gate voltage: 4,5V
Transistor type: N-MOSFET
Max. gate-source Voltage: 6V
Operating temperature (range): -55°C ~ 150°C