NTE4153NT1G 

Symbol Micros: TNTE4153n

132712

TNTE4153n

Contractor Symbol:

Case : SC89-3

Datasheet

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Transistor N-Channel MOSFET; 20V; 6V; 230mOhm; 915mA; 300mW; -55°C~150°C;

Parameters

Open channel resistance:	230mOhm
Max. drain current:	915mA
Max. power loss:	300mW
Case:	SC89-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NTE4153NT1G Case style: SC89-3  

External warehouse:

39000 pcs.

Quantity of pcs.	15000+ (Please wait for the order confirmation)
Net price (EUR)	0,0267

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	230mOhm
Max. drain current:	915mA
Max. power loss:	300mW
Case:	SC89-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	6V
Operating temperature (range):	-55°C ~ 150°C

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