NTGS4111PT1G 

Symbol Micros: TNTGS4111p

133024

TNTGS4111p

Contractor Symbol:

Case : TSOP06

Datasheet

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Transistor P-Channel MOSFET; 30V; 20V; 60mOhm; 2,6A; 630mW; -55°C~150°C;

Parameters

Open channel resistance:	60mOhm
Max. drain current:	2,6A
Max. power loss:	630mW
Case:	TSOP06
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NTGS4111PT1G Case style: TSOP06  

External warehouse:

111000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,1043

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	60mOhm
Max. drain current:	2,6A
Max. power loss:	630mW
Case:	TSOP06
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Max. drain-gate voltage:	10V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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