NTGS5120PT1G 

Symbol Micros: TNTGS5120p

133025

TNTGS5120p

Contractor Symbol:

Case : TSOP06

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 111mOhm; 1,8A; 600mW; -55°C~150°C;

Parameters

Open channel resistance:	111mOhm
Max. drain current:	1,8A
Max. power loss:	600mW
Case:	TSOP06
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	111mOhm
Max. drain current:	1,8A
Max. power loss:	600mW
Case:	TSOP06
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	10V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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