NTJD4401NT1G

Symbol Micros: TNTJD4401
Contractor Symbol:
Case : SOT363 t/r
2xN-MOSFET 20V 0.63A 0.55W
Parameters
Open channel resistance: 445mOhm
Max. drain current: 910mA
Max. power loss: 550mW
Case: SOT363 t/r
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Manufacturer:: ON-Semiconductor Manufacturer part number: NTJD4401 RoHS Case style: SOT363 t/r Datasheet
In stock:
70 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2644 0,1452 0,0951 0,0822 0,0758
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Packaging:
100
Manufacturer:: ON-Semiconductor Manufacturer part number: NTJD4401NT1G Case style: SOT363 t/r  
External warehouse:
69000 pcs.
Quantity of pcs. 12000+ (Please wait for the order confirmation)
Net price (EUR) 0,0758
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: NTJD4401NT1G Case style: SOT363 t/r  
External warehouse:
411000 pcs.
Quantity of pcs. 6000+ (Please wait for the order confirmation)
Net price (EUR) 0,0758
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 445mOhm
Max. drain current: 910mA
Max. power loss: 550mW
Case: SOT363 t/r
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD