NTJD4401NT1G

Symbol Micros: TNTJD4401
Contractor Symbol:
Case : SOT363 t/r
2xN-MOSFET 20V 0.63A 0.55W
Parameters
Open channel resistance: 445mOhm
Max. drain current: 910mA
Max. power loss: 550mW
Case: SOT363 t/r
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: NTJD4401 RoHS Case style: SOT363 t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2447 0,1297 0,1007 0,0928 0,0889
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Packaging:
100
Open channel resistance: 445mOhm
Max. drain current: 910mA
Max. power loss: 550mW
Case: SOT363 t/r
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD