NTJD5121NT1G
Symbol Micros:
TNTJD5121n
Case : SOT363
Trans MOSFET N-CH 60V 0.295A 6-Pin SOT-363
Parameters
| Open channel resistance: | 2,5Ohm |
| Max. drain current: | 295mA |
| Max. power loss: | 250mW |
| Case: | SOT363 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 60V |
| Transistor type: | 2xN-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: NTJD5121NT1G RoHS
Case style: SOT363 t/r
Datasheet
In stock:
100 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1996 | 0,1000 | 0,0594 | 0,0493 | 0,0444 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: NTJD5121NT1G
Case style: SOT363
External warehouse:
39000 pcs.
| Quantity of pcs. | 12000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0444 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: NTJD5121NT1G
Case style: SOT363
External warehouse:
24000 pcs.
| Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0444 |
| Open channel resistance: | 2,5Ohm |
| Max. drain current: | 295mA |
| Max. power loss: | 250mW |
| Case: | SOT363 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 60V |
| Transistor type: | 2xN-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols