NTJD5121NT1G

Symbol Micros: TNTJD5121n

132971

TNTJD5121n

Contractor Symbol:

Case : SOT363

Datasheet

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Trans MOSFET N-CH 60V 0.295A 6-Pin SOT-363

Parameters

Open channel resistance:	2,5Ohm
Max. power loss:	250mW
Max. drain current:	295mA
Case:	SOT363
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	2xN-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NTJD5121NT1G RoHS Case style: SOT363 t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	5+	20+	100+	300+	1000+
Net price (EUR)	0,1974	0,0989	0,0588	0,0488	0,0439

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,5Ohm
Max. power loss:	250mW
Max. drain current:	295mA
Case:	SOT363
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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