NTLJD3119CTBG
Symbol Micros:
TNTLJD3119ctbg
Case : WDFN6 =ODFN6(2.1x2)
Transistor N/P-Channel MOSFET; 20V; 10V; 65mOhm; 2,6A; 710mW; -55°C~150°C;
Parameters
| Open channel resistance: | 65mOhm |
| Max. drain current: | 2,6A |
| Max. power loss: | 710mW |
| Case: | WDFN6 (2x2) |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 20V |
| Max. drain-gate voltage: | 4,5V |
Manufacturer:: ON-Semicoductor
Manufacturer part number: NTLJD3119CTBG
Case style: WDFN6 =ODFN6(2.1x2)
External warehouse:
3000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,2669 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: NTLJD3119CTBG
Case style: WDFN6 =ODFN6(2.1x2)
External warehouse:
3000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1774 |
| Open channel resistance: | 65mOhm |
| Max. drain current: | 2,6A |
| Max. power loss: | 710mW |
| Case: | WDFN6 (2x2) |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 20V |
| Max. drain-gate voltage: | 4,5V |
| Transistor type: | N/P-MOSFET |
| Max. gate-source Voltage: | 10V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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