NTLJD3119CTBG

Symbol Micros: TNTLJD3119ctbg

133063

TNTLJD3119ctbg

Contractor Symbol:

Case : WDFN6 =ODFN6(2.1x2)

Datasheet

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Transistor N/P-Channel MOSFET; 20V; 10V; 65mOhm; 2,6A; 710mW; -55°C~150°C;

Parameters

Open channel resistance:	65mOhm
Max. drain current:	2,6A
Max. power loss:	710mW
Case:	WDFN6 (2x2)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V

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• Parameters

Open channel resistance:	65mOhm
Max. drain current:	2,6A
Max. power loss:	710mW
Case:	WDFN6 (2x2)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V
Transistor type:	N/P-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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