NTLJS2103PTBG 

Symbol Micros: TNTLJS2103ptbg

133068

TNTLJS2103ptbg

Contractor Symbol:

Case : WDFN6 =ODFN6(2.1x2)

Datasheet

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Transistor P-Channel MOSFET; 12V; 8V; 40mOhm; 3,5A; 700mW; -55°C~150°C;

Parameters

Open channel resistance:	40mOhm
Max. drain current:	3,5A
Max. power loss:	700mW
Case:	WDFN6 (2x2)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	12V
Max. drain-gate voltage:	4,5V

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• Parameters

Open channel resistance:	40mOhm
Max. drain current:	3,5A
Max. power loss:	700mW
Case:	WDFN6 (2x2)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	12V
Max. drain-gate voltage:	4,5V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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