G33N03D52

Symbol Micros: TNTMFD4c20n GO

397085

TNTMFD4c20n GO

Contractor Symbol:

Case : DFN08(5x6)

Datasheet

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Transistor MOSFET; DFN5*6-8L; DUAL; N+N-Channel; NO ESD; 30V; 33A; 29W; 1.85V; 30mOhm NTMFD4C20NT1G; NTMFD4C20NT3G

Parameters

Open channel resistance:	30mOhm
Max. drain current:	33A
Max. power loss:	29W
Case:	DFN08(5x6) Dual
Manufacturer:	GOFORD
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	33A
Max. power loss:	29W
Case:	DFN08(5x6) Dual
Manufacturer:	GOFORD
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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