NTR1P02LT1G

Symbol Micros: TNTR1P02l

118090

TNTR1P02l

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel)

Parameters

Open channel resistance:	350mOhm
Max. drain current:	1,3A
Max. power loss:	400mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NTR1P02LT1G RoHS Case style: SOT23t/r Datasheet

In stock:

1380 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2280	0,1260	0,0838	0,0700	0,0651

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	350mOhm
Max. drain current:	1,3A
Max. power loss:	400mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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