NTS4101PT1G

Symbol Micros: TNTS4101pt1g

106449

TNTS4101pt1g

Contractor Symbol:

Case : SOT323

Datasheet

Technical drawing Add to favourites

P-MOSFET 20V 1.37A 120mΩ 329mW

Parameters

Open channel resistance:	160mOhm
Max. drain current:	1,37A
Max. power loss:	329mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: NTS4101PT1G RoHS Case style: SOT323 t/r Datasheet

In stock:

2565 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2306	0,1275	0,0847	0,0708	0,0659

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	160mOhm
Max. drain current:	1,37A
Max. power loss:	329mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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