NTS4101PT1G

Symbol Micros: TNTS4101pt1g
Contractor Symbol:
Case : SOT323
P-MOSFET 20V 1.37A 120mΩ 329mW
Parameters
Open channel resistance: 160mOhm
Max. drain current: 1,37A
Max. power loss: 329mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Max. gate-source Voltage: 8V
Manufacturer:: ON-Semiconductor Manufacturer part number: NTS4101PT1G RoHS Case style: SOT323 t/r Datasheet
In stock:
2565 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2262 0,1251 0,0831 0,0695 0,0646
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Packaging:
3000
Open channel resistance: 160mOhm
Max. drain current: 1,37A
Max. power loss: 329mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Max. gate-source Voltage: 8V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD