NTS4173PT1G

Symbol Micros: TNTS4173pt1g

108027

TNTS4173pt1g

Contractor Symbol:

Case : SOT323

Datasheet

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P-MOSFET 30V 1.2A

Parameters

Open channel resistance:	280mOhm
Max. drain current:	1,2A
Max. power loss:	290mW
Case:	SOT323
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: NTS4173PT1G RoHS Case style: SOT323 t/r Datasheet

In stock:

2795 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3147	0,1672	0,1297	0,1196	0,1146

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	280mOhm
Max. drain current:	1,2A
Max. power loss:	290mW
Case:	SOT323
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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