NTZD3154NT1G
Symbol Micros:
TNTZD3154n
Case : SOT666
Transistor 2xN-Channel MOSFET; 20V; 7V; 900mOhm; 540mA; 280mW; -55°C ~ 150°C; NTZD3154NT5G
Parameters
| Open channel resistance: | 900mOhm |
| Max. drain current: | 540mA |
| Max. power loss: | 280mW |
| Case: | SOT666 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 20V |
| Max. gate-source Voltage: | 7V |
| Open channel resistance: | 900mOhm |
| Max. drain current: | 540mA |
| Max. power loss: | 280mW |
| Case: | SOT666 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 20V |
| Max. gate-source Voltage: | 7V |
| Transistor type: | 2xN-MOSFET |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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