NVMFD6H852NLT1G 

Symbol Micros: TNVMFD6H852NLT1G

393838

TNVMFD6H852NLT1G

Contractor Symbol:

Case : DFN08

Datasheet

Technical drawing Add to favourites

80V 25A 25.5mΩ@10V,25A 38W 2V 2 N-Channel DFN-8(4.9x5.9) MOSFETs ROHS Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	31,5mOhm
Max. drain current:	25A
Max. power loss:	3,2W
Case:	DFN08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	80V
Transistor type:	2xN-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: NVMFD6H852NLT1G Case style: DFN08  

External warehouse:

1500 pcs.

Quantity of pcs.	1500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5941

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Packaging:
1500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	31,5mOhm
Max. drain current:	25A
Max. power loss:	3,2W
Case:	DFN08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	80V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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