NVMFD6H852NLT1G 

Symbol Micros: TNVMFD6H852NLT1G

393838

TNVMFD6H852NLT1G

Contractor Symbol:

Case : DFN08

Datasheet

Technical drawing Add to favourites

80V 25A 25.5mΩ@10V,25A 38W 2V 2 N-Channel DFN-8(4.9x5.9) MOSFETs ROHS Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	31,5mOhm
Max. drain current:	25A
Max. power loss:	3,2W
Case:	DFN08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	80V
Transistor type:	2xN-MOSFET

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	31,5mOhm
Max. drain current:	25A
Max. power loss:	3,2W
Case:	DFN08
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	80V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.