NX3008PBKW

Symbol Micros: TNX3008pbkw

193532

TNX3008pbkw

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Case : SOT323

Datasheet

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P-MOSFET -200mA -30V 0.26W 4.1Ohm; NX3008PBKW,115

Parameters

Open channel resistance:	4,1Ohm
Max. drain current:	-200mA
Max. power loss:	260mW
Case:	SOT323
Manufacturer:	NXP
Max. drain-source voltage:	-30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	4,1Ohm
Max. drain current:	-200mA
Max. power loss:	260mW
Case:	SOT323
Manufacturer:	NXP
Max. drain-source voltage:	-30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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