NXH008T120M3F2PTHG

Symbol Micros: TNXH008T120M3F2PTHG

538153

TNXH008T120M3F2PTHG

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Case : PIM29(56.7x42.5)

Datasheet

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MOSFET 4N-CH 1200V 129A 29PIM

Parameters

Open channel resistance:	11,5mOhm
Max. drain current:	129A
Max. power loss:	371W
Case:	PIM29(56.7x42.5)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1200V
Max. gate-source Voltage:	22V

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• Parameters

Open channel resistance:	11,5mOhm
Max. drain current:	129A
Max. power loss:	371W
Case:	PIM29(56.7x42.5)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1200V
Max. gate-source Voltage:	22V
Transistor type:	N-MOSFET
Operating temperature (range):	-40°C ~ 175°C

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