NXH010P120MNF1PTG onsemi

Symbol Micros: TNXH010P120MNF1PTG

389037

TNXH010P120MNF1PTG

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Datasheet

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PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays

Parameters

Open channel resistance:	14mOhm
Max. drain current:	114A
Max. power loss:	413W
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1200V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	25V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: NXH010P120MNF1PTG Case style:    

External warehouse:

9 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	109,1832

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: NXH010P120MNF1PTG Case style:    

External warehouse:

356 pcs.

Quantity of pcs.	28+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	121,9641

Add to comparison tool Add inquiry (RFQ)

Packaging:
28

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	14mOhm
Max. drain current:	114A
Max. power loss:	413W
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1200V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-40°C ~ 150°C

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