NXH010P120MNF1PTNG onsemi

Symbol Micros: TNXH010P120MNF1PTNG

389038

TNXH010P120MNF1PTNG

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PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays

Parameters

Open channel resistance:	14mOhm
Max. drain current:	114A
Max. power loss:	413W
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1200V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	25V

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• Parameters

Open channel resistance:	14mOhm
Max. drain current:	114A
Max. power loss:	413W
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1200V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-40°C ~ 150°C

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