NXV90EPR

Symbol Micros: TNXV90EPR
Contractor Symbol:
Case : TO236-3 AB =>SOT23-3
NXV90EP/SOT23/TO-236AB
Parameters
Open channel resistance: 210mOhm
Max. drain current: 1,5A
Max. power loss: 470mW
Case: TO236-3 AB =>SOT23-3
Manufacturer: NXP
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: NXP Manufacturer part number: NXV90EPR RoHS Case style: SOT23-3 t/r Datasheet
In stock:
20 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,3031 0,1929 0,1353 0,1175 0,1099
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Packaging:
50
Manufacturer:: Nexperia Manufacturer part number: NXV90EPR Case style: TO236-3 AB =>SOT23-3  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1099
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: NXV90EPR Case style: TO236-3 AB =>SOT23-3  
External warehouse:
9000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1099
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 210mOhm
Max. drain current: 1,5A
Max. power loss: 470mW
Case: TO236-3 AB =>SOT23-3
Manufacturer: NXP
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD