PBRN113ET,215 NXP

Symbol Micros: TPBRN113et
Contractor Symbol:
Case : SOT23-3
NPN 40V 600mA 250mW
Parameters
Power dissipation: 570mW
Manufacturer: NXP
Current gain factor: 420
Case: SOT23-3
Max. collector current: 700mA
Max collector-emmiter voltage: 40V
Operating temperature (range): -65°C ~ 150°C
Manufacturer:: NXP Manufacturer part number: PBRN113ET,215 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
45 pcs.
Quantity of pcs. 3+ 10+ 50+ 250+ 1000+
Net price (EUR) 0,3081 0,1969 0,1381 0,1183 0,1122
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Packaging:
50/250
Power dissipation: 570mW
Manufacturer: NXP
Current gain factor: 420
Case: SOT23-3
Max. collector current: 700mA
Max collector-emmiter voltage: 40V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN