PBRN113ET,215 NXP
Symbol Micros:
TPBRN113et
Case : SOT23-3
NPN 40V 600mA 250mW
Parameters
Power dissipation: | 570mW |
Manufacturer: | NXP |
Current gain factor: | 420 |
Case: | SOT23-3 |
Max. collector current: | 700mA |
Max collector-emmiter voltage: | 40V |
Operating temperature (range): | -65°C ~ 150°C |
Power dissipation: | 570mW |
Manufacturer: | NXP |
Current gain factor: | 420 |
Case: | SOT23-3 |
Max. collector current: | 700mA |
Max collector-emmiter voltage: | 40V |
Operating temperature (range): | -65°C ~ 150°C |
Transistor type: | NPN |
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