PDTA114ET,215

Symbol Micros: TPDTA114et

28172

TPDTA114et

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor PNP; 30; 250mW; 50V; 100mA; 180MHz; -65°C ~ 150°C; Replacement: PDTA114ET,235 (10K/RL); PDTA114ET,215 (3K/RL); PDTA114ET/DG/B2; PDTA114ET/DG/B4,21;

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Case:	SOT23
Current gain factor:	30
Cutoff frequency:	180MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

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Estimated date:
2027-12-31

Quantity of pcs.: 9000

• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Case:	SOT23
Current gain factor:	30
Cutoff frequency:	180MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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