PDTA115ET

Symbol Micros: TPDTA115et

293309

TPDTA115et

Contractor Symbol:

Case : SOT23

Datasheet

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Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin TO-236AB PDTA115ET,215

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	80
Case:	SOT-23
Max. collector current:	20mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C

All parameters

Manufacturer:: NXP Manufacturer part number: PDTA115ET,215 RoHS Case style: SOT23t/r  

In stock:

3000 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4093	0,2252	0,1772	0,1642	0,1573

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	80
Case:	SOT-23
Max. collector current:	20mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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